Density dependence of spin relaxation in GaAs quantum well at room temperature

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dc.creatorTeng, L. H.
dc.creatorZhang, P.
dc.creatorLai, T. S.
dc.creatorWu, M. W.
dc.date2008-06-16
dc.date2008-09-08
dc.date.accessioned2026-07-07T10:06:31Z
dc.date.available2026-07-07T10:06:31Z
dc.descriptionCarrier density dependence of electron spin relaxation in an intrinsic GaAs quantum well is investigated at room temperature using time-resolved circularly polarized pump-probe spectroscopy. It is revealed that the spin relaxation time first increases with density in the relatively low density regime where the linear D'yakonov-Perel' spin-orbit coupling terms are dominant, and then tends to decrease when the density is large and the cubic D'yakonov-Perel' spin-orbit coupling terms become important. These features are in good agreement with theoritical predictions by Lü {\em et al.} [Phys. Rev. B {\bf 73}, 125314 (2006)]. A fully microscopic calculation based on numerically solving the kinetic spin Bloch equations with both the D'yakonov-Perel' and the Bir-Aronov-Pikus mechanisms included, reproduces the density dependence of spin relaxation very well.
dc.description4 pages, 2 figures, Europhys. Lett., in press
dc.identifierhttps://arxiv.org/abs/0806.2577
dc.identifierhttp://arxiv.org/abs/0806.2577
dc.identifierEurophys. Lett. 84, 27006 (2008).
dc.identifierdoi:10.1209/0295-5075/84/27006
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/170355
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.titleDensity dependence of spin relaxation in GaAs quantum well at room temperature
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