Direct measurements of the spin and the cyclotron gaps in a 2D electron system in silicon

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dc.creatorKhrapai, V. S.
dc.creatorShashkin, A. A.
dc.creatorDolgopolov, V. T.
dc.date2003-01-20
dc.date.accessioned2026-07-07T02:49:15Z
dc.date.available2026-07-07T02:49:15Z
dc.descriptionUsing magnetocapacitance data in tilted magnetic fields, we directly determine the chemical potential jump in a strongly correlated two-dimensional electron system in silicon when the filling factor traverses the spin and the cyclotron gaps. The data yield an effective g-factor that is close to its value in bulk silicon and does not depend on filling factor. The cyclotron splitting corresponds to the effective mass that is strongly enhanced at low electron densities.
dc.identifierhttps://arxiv.org/abs/cond-mat/0301361
dc.identifierhttp://arxiv.org/abs/cond-mat/0301361
dc.identifierPhys. Rev. Lett. 91, 126404 (2003)
dc.identifierdoi:10.1103/PhysRevLett.91.126404
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/20721
dc.subjectStrongly Correlated Electrons
dc.titleDirect measurements of the spin and the cyclotron gaps in a 2D electron system in silicon
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