Hard x-ray photoemission study of LaAlO3/LaVO3 multilayers

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dc.creatorWadati, H.
dc.creatorHotta, Y.
dc.creatorFujimori, A.
dc.creatorSusaki, T.
dc.creatorHwang, H. Y.
dc.creatorTakata, Y.
dc.creatorHoriba, K.
dc.creatorMatsunami, M.
dc.creatorShin, S.
dc.creatorYabashi, M.
dc.creatorTamasaku, K.
dc.creatorNishino, Y.
dc.creatorIshikawa, T.
dc.date2007-04-13
dc.date.accessioned2026-07-07T08:54:42Z
dc.date.available2026-07-07T08:54:42Z
dc.descriptionWe have studied the electronic structure of multilayers composed of a band insulator LaAlO$_3$ (LAO) and a Mott insulator LaVO$_3$ (LVO) by means of hard x-ray photoemission spectroscopy, which has a probing depth as large as $\sim 60 Å$. The Mott-Hubbard gap of LVO remained open at the interface, indicating that the interface is insulating unlike the LaTiO$_3$/SrTiO$_3$ multilayers. We found that the valence of V in LVO were partially converted from V$^{3+}$ to V$^{4+}$ only at the interface on the top side of the LVO layer and that the amount of V$^{4+}$ increased with LVO layer thickness. We suggest that the electronic reconstruction to eliminate the polarity catastrophe inherent in the polar heterostructure is the origin of the highly asymmetric valence change at the LVO/LAO interfaces.
dc.description5 pages, 7 figures
dc.identifierhttps://arxiv.org/abs/0704.1837
dc.identifierhttp://arxiv.org/abs/0704.1837
dc.identifierPhys. Rev. B 77, 045122 (2008)
dc.identifierdoi:10.1103/PhysRevB.77.045122
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/146030
dc.subjectStrongly Correlated Electrons
dc.subjectMaterials Science
dc.titleHard x-ray photoemission study of LaAlO3/LaVO3 multilayers
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