A Mechanism of Porous-Silicon Luminescence

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dc.creatorBentosela, F.
dc.creatorExner, P.
dc.creatorZagrebnov, V. A.
dc.date1997-09-25
dc.date.accessioned2026-07-07T09:12:14Z
dc.date.available2026-07-07T09:12:14Z
dc.descriptionWe discuss the discrete spectrum induced by bulges on threadlike mesoscopic objects, using two models, a continuous hard-wall waveguide and a discrete tight-binding model with two sorts of atomic orbitals. We show that elongated bulges induce numerous quasibound states. In the discrete model we also evaluate the probability of transition between the localized states and extended ones of the "valence" band. We suggest this as a mechanism governing the porous-silicon luminescence. In addition, the model reproduces the dominance of nonradiative transitions, blue shift for finer textures and luminescence suppression at low temperatures.
dc.descriptionA LaTeX source file together with two ps figures. The paper is due to appear in Phys. Rev. B
dc.identifierhttps://arxiv.org/abs/cond-mat/9709281
dc.identifierhttp://arxiv.org/abs/cond-mat/9709281
dc.identifierPhys. Rev. B57 (1998), 1382-1385
dc.identifierdoi:10.1103/PhysRevB.57.1382
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/151955
dc.subjectMesoscale and Nanoscale Physics
dc.titleA Mechanism of Porous-Silicon Luminescence
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