Fabrication and Characterization of Boron Carbide / n-Silicon Carbide Heterojunction Diodes

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dc.creatorAdenwalla, S.
dc.creatorWelsch, P.
dc.creatorHarken, A.
dc.creatorBrand, J. I.
dc.creatorSezer, A.
dc.creatorRobertson, B. W.
dc.date2001-01-17
dc.date.accessioned2026-07-07T02:40:06Z
dc.date.available2026-07-07T02:40:06Z
dc.descriptionThe fabrication, initial structural characterization and diode measurements are reported for the first boron carbide / silicon carbide heterojunction diode. Current-voltage curves obtained for operation at temperatures from 24 C to 388 C. PECVD-deposited undoped boron carbide material is highly crystalline and consists of a variety of polytypes of B-C with crystal sizes as large as 110 nm. Crystal phases are similar to those for PECVD B-C on Si but only partially match known boron and boron-rich B-C phases.
dc.description8 pages, 2 figures, 1 table
dc.identifierhttps://arxiv.org/abs/cond-mat/0101267
dc.identifierhttp://arxiv.org/abs/cond-mat/0101267
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/17266
dc.subjectMaterials Science
dc.titleFabrication and Characterization of Boron Carbide / n-Silicon Carbide Heterojunction Diodes
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