Tunneling in very small GaAs MESFET

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dc.creatorPoirier, W.
dc.creatorMailly, D.
dc.creatorSanquer, M.
dc.date1997-12-22
dc.date.accessioned2026-07-07T03:09:41Z
dc.date.available2026-07-07T03:09:41Z
dc.descriptionWe study the transport through gated GaAS:Si wires of 0.5 micrometer length in the insulating regime and observe transport via elastic tunneling at very low temperature. We describe the mean positive magnetoconductance and the mesoscopic fluctuations of the conductance (versus energy or magnetic field) purely within one electron model without introducing Coulomb blockade considerations.
dc.description23 pages, 19 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/9712270
dc.identifierhttp://arxiv.org/abs/cond-mat/9712270
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/27985
dc.subjectMesoscale and Nanoscale Physics
dc.subjectDisordered Systems and Neural Networks
dc.titleTunneling in very small GaAs MESFET
dc.typetext

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