Electron states of mono- and bilayer graphene on SiC probed by STM

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dc.creatorMallet, Pierre
dc.creatorVarchon, François
dc.creatorNaud, Cécile
dc.creatorMagaud, Laurence
dc.creatorBerger, Claire
dc.creatorVeuillen, Jean-Yves
dc.date2007-02-19
dc.date.accessioned2026-07-07T08:21:46Z
dc.date.available2026-07-07T08:21:46Z
dc.descriptionWe present a scanning tunneling microscopy (STM) study of a gently-graphitized 6H-SiC(0001) surface in ultra high vacuum. From an analysis of atomic scale images, we identify two different kinds of terraces, which we unambiguously attribute to mono- and bilayer graphene capping a C-rich interface. At low temperature, both terraces show $(\sqrt{3}\times \sqrt{3})$ quantum interferences generated by static impurities. Such interferences are a fingerprint of $π$-like states close to the Fermi level. We conclude that the metallic states of the first graphene layer are almost unperturbed by the underlying interface, in agreement with recent photoemission experiments (A. Bostwick et al., Nature Physics 3, 36 (2007))
dc.description4 pages, 3 figures submitted
dc.identifierhttps://arxiv.org/abs/cond-mat/0702406
dc.identifierhttp://arxiv.org/abs/cond-mat/0702406
dc.identifierPhysical Review B 76, 4 (2007) 041403
dc.identifierdoi:10.1103/PhysRevB.76.041403
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/135431
dc.subjectMaterials Science
dc.titleElectron states of mono- and bilayer graphene on SiC probed by STM
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