Dynamics of the Inductive Single-Electron Transistor
| dc.creator | Sillanpää, Mika A. | |
| dc.creator | Roschier, Leif | |
| dc.creator | Hakonen, Pertti J. | |
| dc.date | 2004-06-21 | |
| dc.date.accessioned | 2026-07-07T02:58:44Z | |
| dc.date.available | 2026-07-07T02:58:44Z | |
| dc.description | Using a classical equation of motion, dynamics of the phase is analyzed in the Inductive Single-Electron Transistor (L-SET) which is a promising new system suitable for quantum measurement with ultimate sensitivity and low back-action. In a regime of nonlinear dynamics, a shift of the oscillator resonant frequency is discovered which has a direct analogy to the switching of a dc-biased Josephson junction into voltage state. Results are reviewed for the predicted charge sensitivity, and it is shown that a performance challenging the best rf-SETs is foreseeable with the new device. | |
| dc.description | 4 pages, submitted to Proceedings of the Vth Rencontres de Moriond in Mesoscopic Physics | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0406479 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0406479 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/24229 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Dynamics of the Inductive Single-Electron Transistor | |
| dc.type | text |