Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities

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dc.creatorBajoni, Daniele
dc.creatorSenellart, Pascale
dc.creatorWertz, Esther
dc.creatorSagnes, Isabelle
dc.creatorMiard, Audrey
dc.creatorLemaître, Aristide
dc.creatorBloch, Jacqueline
dc.date2007-10-10
dc.date2007-12-03
dc.date.accessioned2026-07-07T09:27:34Z
dc.date.available2026-07-07T09:27:34Z
dc.descriptionPolariton lasing is demonstrated on the zero dimensional states of single GaAs/GaAlAs micropillar cavities. Under non resonant excitation, the measured polariton ground state occupancy is found to be as large as $10^{4}$. Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode.
dc.description5 pages, 4 figures, accepted for publication in Physical Review Letters
dc.identifierhttps://arxiv.org/abs/0710.2060
dc.identifierhttp://arxiv.org/abs/0710.2060
dc.identifierPhys. Rev. Lett. 100, 047401 (2008)
dc.identifierdoi:10.1103/PhysRevLett.100.047401
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/157151
dc.subjectMaterials Science
dc.titlePolariton laser using single micropillar GaAs-GaAlAs semiconductor cavities
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