Smart Electromechanical Pumping of Electrons in a Nanopillars Transistor

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dc.creatorWan, Yue-Min
dc.creatorLin, Heng-Tien
dc.date2007-07-04
dc.date2007-07-24
dc.date.accessioned2026-07-07T08:19:34Z
dc.date.available2026-07-07T08:19:34Z
dc.descriptionAnalysis of room-temperature current-voltage (I-V) characteristics of a silicon box in a nanopillar transistor suggests that a weak electromechanical coupling of 0.17 is responsible for the stable tunnel of single-electron. The dynamics involves a few electrons and the numbers (N) specified are periodical at 3, 6, and 12. Quantized currents are observed at N = 7 and 13, indicating that the box is a man-made atom. At a large value of 0.5, instability however dominates the I-V by showing interference, channel closure and the change of tunnel direction. Overall, the interplay of even and odd electrons between different channels also shows that the box operates itself like a smart quantum pump.
dc.description17 pages, 5 figures, 1 table
dc.identifierhttps://arxiv.org/abs/0707.0524
dc.identifierhttp://arxiv.org/abs/0707.0524
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/134802
dc.subjectQuantum Physics
dc.titleSmart Electromechanical Pumping of Electrons in a Nanopillars Transistor
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