Molecular electronics exploiting sharp structure in the electrode density-of-states. Negative differential resistance and Resonant Tunneling in a poled molecular layer on Al/LiF electrodes

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dc.creatorLu, Z. H.
dc.creatorDharma-wardana, M. W. C.
dc.creatorKhangura, R. S.
dc.creatorZgierski, Marek Z.
dc.creatorRitchie, Douglas
dc.date2004-02-09
dc.date.accessioned2026-07-07T02:56:24Z
dc.date.available2026-07-07T02:56:24Z
dc.descriptionDensity-functional calculations are used to clarify the role of an ultrathin LiF layer on Al electrodes used in molecular electronics. The LiF layer creates a sharp density of states (DOS), as in a scanning-tunneling microscope (STM) tip. The sharp DOS, coupled with the DOS of the molecule leads to negative differential resistance (NDR). Electron transfer between oriented molecules occurs via resonant tunneling. The I-V characteristic for a thin-film of tris (8-hydroxyquinoline)- aluminum (AlQ) molecules, oriented using electric-field poling, and sandwiched between two Al/LiF electrodes is in excellent agreement with theory. This molecular device presents a new paradigm for a convenient, robust, inexpensive alternative to STM or mechanical break-junction structures.
dc.description5 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0402257
dc.identifierhttp://arxiv.org/abs/cond-mat/0402257
dc.identifierApplied Physics letters, vol 85, pp. 323-325 (2004)
dc.identifierdoi:10.1063/1.1764935
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/23306
dc.subjectMaterials Science
dc.titleMolecular electronics exploiting sharp structure in the electrode density-of-states. Negative differential resistance and Resonant Tunneling in a poled molecular layer on Al/LiF electrodes
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