On the Debye Effect in a Semiconductor and an Electrolyte

dc.creatorPiekarski, S.
dc.date2004-03-31
dc.date2004-04-02
dc.date.accessioned2026-07-07T02:57:22Z
dc.date.available2026-07-07T02:57:22Z
dc.descriptionIt is shown that the standard expression for the diffusive flux in a semiconductor can be transformed to the flux from the Einstein-Smoluchowski equation after making use of the "Einstein identities". Later, it is possible to use a transformation introduced in: S. Piekarski: "On the modified Fick law and its potential applications" (J.Tech.Phys.,44,2,125-131,2003). In this formalism, it is possible to formulate simple models of a semiconductor and an electrolyte and to obtain the alternative description of a Debye effect (by the Debye effect we mean here the screening of the point particle potential). Final results are compared with the standard analysis.
dc.description15 pages, no figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0403758
dc.identifierhttp://arxiv.org/abs/cond-mat/0403758
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/23643
dc.subjectMaterials Science
dc.titleOn the Debye Effect in a Semiconductor and an Electrolyte
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