Comment on "Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers" (Das Sarma and Hwang, cond-mat/9812216)

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dc.creatorKravchenko, S. V.
dc.creatorSimonian, D.
dc.creatorSarachik, M. P.
dc.date1998-12-20
dc.date.accessioned2026-07-07T03:12:27Z
dc.date.available2026-07-07T03:12:27Z
dc.descriptionIn a recent preprint cond-mat/9812216, Das Sarma and Hwang propose an explanation of the sharp decrease in resistivity at low temperatures which has been attributed to a transition to an unexpected conducting phase in dilute high-mobility two-dimensional systems at B=0. In this Comment, we examine whether their model is supported by the available experimental data.
dc.description1 page, LaTeX file
dc.identifierhttps://arxiv.org/abs/cond-mat/9812331
dc.identifierhttp://arxiv.org/abs/cond-mat/9812331
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/28914
dc.subjectStrongly Correlated Electrons
dc.titleComment on "Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers" (Das Sarma and Hwang, cond-mat/9812216)
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