Electronic structure and exchange constants in magnetic semiconductors digital alloys: chemical and band-gap effects
| dc.creator | Picozzi, S. | |
| dc.creator | Lezaic, M. | |
| dc.creator | Blügel, S. | |
| dc.date | 2006-03-22 | |
| dc.date.accessioned | 2026-07-07T07:52:15Z | |
| dc.date.available | 2026-07-07T07:52:15Z | |
| dc.description | First-principles simulations have been performed for [001]-ordered Mn/Ge and Mn/GaAs "digital alloys", focusing on the effects of i) a larger band-gap and ii) a different semiconducting host on the electronic structure of the magnetic semiconductors of interest. Our results for the exchange constants in Mn/Ge, evaluated using a frozen-magnon scheme, show that a larger band-gap tends to give a stronger nearest-neighbor ferromagnetic coupling and an overall enhanced in-plane ferromagnetic coupling even for longer-ranged coupling constants. As for the chemical effects on the exchange constants, we show that Mn/GaAs shows a smaller nearest-neighbor ferromagnetic coupling than Mn/Ge, but exchange constants for higher Mn-Mn distance show an overall increased ferromagnetic behavior in Mn/GaAs. As a result, from the magnetic-coupling point of view, the two systems behave on average rather similarly. | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0603589 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0603589 | |
| dc.identifier | physica status solidi (a) 203, 2738 (2006) | |
| dc.identifier | doi:10.1002/pssa.200669574 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/125813 | |
| dc.subject | Materials Science | |
| dc.title | Electronic structure and exchange constants in magnetic semiconductors digital alloys: chemical and band-gap effects | |
| dc.type | text |