High Field Mobility and Diffusivity of Electron Gas in Silicon Devices
| dc.creator | Liotta, S. F. | |
| dc.creator | Majorana, A. | |
| dc.date | 2000-03-28 | |
| dc.date.accessioned | 2026-07-07T02:37:13Z | |
| dc.date.available | 2026-07-07T02:37:13Z | |
| dc.description | In this paper the Boltzmann equation describing the carrier transport in a semiconductor is considered. A modified Chapman-Enskog method is used, in order to find approximate solutions in the weakly non-homogeneous case. These solutions allow to calculate the mobility and diffusion coefficients as function of the electric field. The integral-differential equations derived by the above method are numerically solved by means of a combination of spherical harmonics functions and finite-difference operators. The Kane model for the electron band structure is assumed; the parabolic band approximation is obtained as a particular case. The numerical values for mobility and diffusivity in a silicon device are compared with the experimental data. The Einstein relation is also shown. | |
| dc.description | 15 pages, Latex, 5 figures (postscript) included in the text | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0003457 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0003457 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/16203 | |
| dc.subject | Statistical Mechanics | |
| dc.title | High Field Mobility and Diffusivity of Electron Gas in Silicon Devices | |
| dc.type | text |