Electron Scattering in Thin GaAs Quantum Wires

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dc.creatorPozdnyakov, Dmitry
dc.creatorGalenchik, Vadim
dc.creatorBorzdov, Andrei
dc.date2006-06-09
dc.date.accessioned2026-07-07T07:12:33Z
dc.date.available2026-07-07T07:12:33Z
dc.descriptionIn this paper the scattering rates of electrons in thin free standing GaAs quantum wires in the electric quantum limit are calculated self-consistently taking into account the collisional broadening caused by scattering processes. The following mechanisms of scattering are considered: one-dimensional acoustic and polar optical phonons, surface roughness and ionized impurities. The non-parabolicity of electron energy spectrum is also taken into account.
dc.description4 pages, 2 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0606239
dc.identifierhttp://arxiv.org/abs/cond-mat/0606239
dc.identifierPhys. Low-Dim. Struct. 2, 87-90 (2006)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/112114
dc.subjectMesoscale and Nanoscale Physics
dc.titleElectron Scattering in Thin GaAs Quantum Wires
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