Observation of disorder-induced weakening of electron-phonon interaction in thin noble metal films

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dc.creatorKarvonen, J. T.
dc.creatorTaskinen, L. J.
dc.creatorMaasilta, I. J.
dc.date2003-11-03
dc.date2005-04-18
dc.date.accessioned2026-07-07T02:54:34Z
dc.date.available2026-07-07T02:54:34Z
dc.descriptionWe have used symmetric normal metal-insulator-superconductor (NIS) tunnel junction pairs, known as SINIS structures, for ultrasensitive thermometry in the temperature range 50 - 700 mK. By Joule heating the electron gas and measuring the electron temperature, we show that the electron-phonon (e-p) scattering rate in the simplest noble metal disordered thin films (Cu,Au) follows a $T^4$ temperature dependence, leading to a stronger decoupling of the electron gas from the lattice at the lowest temperatures. This power law is indicative e-p coupling mediated by vibrating disorder, in contrast to the previously observed $T^3$ and $T^2$ laws.
dc.description5 pages 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0311031
dc.identifierhttp://arxiv.org/abs/cond-mat/0311031
dc.identifierPhys. Rev. B 72, 012302 (2005)
dc.identifierdoi:10.1103/PhysRevB.72.012302
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/22600
dc.subjectMesoscale and Nanoscale Physics
dc.subjectSuperconductivity
dc.titleObservation of disorder-induced weakening of electron-phonon interaction in thin noble metal films
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