Negative capacitance in organic semiconductor devices: bipolar injection and charge recombination mechanism

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dc.creatorEhrenfreund, E.
dc.creatorLungenschmied, C.
dc.creatorDennler, G.
dc.creatorNeugebauer, H.
dc.creatorSariciftci, N. S.
dc.date2007-06-26
dc.date.accessioned2026-07-07T08:14:12Z
dc.date.available2026-07-07T08:14:12Z
dc.descriptionWe report negative capacitance at low frequencies in organic semiconductor based diodes and show that it appears only under bipolar injection conditions. We account quantitatively for this phenomenon by the recombination current due to electron-hole annihilation. Simple addition of the recombination current to the well established model of space charge limited current in the presence of traps, yields excellent fits to the experimentally measured admittance data. The dependence of the extracted characteristic recombination time on the bias voltage is indicative of a recombination process which is mediated by localized traps.
dc.description3 pages, 3 figures, accepted for publication in Applied Physics Letters
dc.identifierhttps://arxiv.org/abs/0706.3933
dc.identifierhttp://arxiv.org/abs/0706.3933
dc.identifierApplied Physics Letters, Vol. 91, 012112 (2007)
dc.identifierdoi:10.1063/1.2752024
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/133041
dc.subjectChemical Physics
dc.titleNegative capacitance in organic semiconductor devices: bipolar injection and charge recombination mechanism
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