Low-T_c Josephson junctions with tailored barrier

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dc.creatorWeides, M.
dc.creatorSchindler, C.
dc.creatorKohlstedt, H.
dc.date2006-12-06
dc.date2007-01-02
dc.date.accessioned2026-07-07T07:52:44Z
dc.date.available2026-07-07T07:52:44Z
dc.descriptionNb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb based superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson tunnel junctions with a thickness step in the metallic ferromagnetic \Ni_{0.6}\Cu_{0.4} interlayer were fabricated. The step was defined by optical lithography and controlled etching. The step height is on the scale of a few angstroms. Experimentally determined junction parameters by current-voltage characteristics and Fraunhofer pattern indicate an uniform F-layer thickness and the same interface transparencies for etched and non-etched F-layers. This technique could be used to tailor low-T_c Josephson junctions having controlled critical current densities at defined parts of the junction area, as needed for tunable resonators, magnetic-field driven electronics or phase modulated devices.
dc.description6 pages, 6 figures, small changes, to be published by JAP
dc.identifierhttps://arxiv.org/abs/cond-mat/0612164
dc.identifierhttp://arxiv.org/abs/cond-mat/0612164
dc.identifierJ. Appl. Phys. 101, 063902 (2007)
dc.identifierdoi:10.1063/1.2655487
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/125989
dc.subjectSuperconductivity
dc.titleLow-T_c Josephson junctions with tailored barrier
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