Renormalization of resonant tunneling in MOSFETs

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dc.creatorMozyrsky, D.
dc.creatorMartin, I.
dc.creatorShnirman, A.
dc.creatorHastings, M. B.
dc.date2003-12-18
dc.date.accessioned2026-07-07T02:55:29Z
dc.date.available2026-07-07T02:55:29Z
dc.descriptionWe study tunneling between a localized defect state and a conduction band in the presence of strong electron-electron and electron-phonons interactions. We derive the tunneling rate as a function of the position of the defect energy level relative to the Fermi energy of conduction electrons. We argue that our results can explain the large tunneling timescales observed in experiments on random telegraph signals in ${\rm Si}$ metal-oxide-semiconductor field effect transistors.
dc.description4 pages, in REVTEX, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0312503
dc.identifierhttp://arxiv.org/abs/cond-mat/0312503
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/22958
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleRenormalization of resonant tunneling in MOSFETs
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