On the possibility of level broadening in a quantum dot due to electrostatic interaction with a gate electrode

Simple item page
dc.creatorIndlekofer, K. M.
dc.date2006-10-29
dc.date2006-11-01
dc.date.accessioned2026-07-07T07:27:43Z
dc.date.available2026-07-07T07:27:43Z
dc.descriptionIn this article, we consider a quantum dot system which is interacting with a spatially separated metallic gate electrode via direct Coulomb interaction. Here, the gate electrode is described by an idealized two-dimensional electron gas. Due to Coulomb scattering effects, the latter may introduce level broadening to the quantum dot system.
dc.identifierhttps://arxiv.org/abs/cond-mat/0610806
dc.identifierhttp://arxiv.org/abs/cond-mat/0610806
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/117476
dc.subjectOther Condensed Matter
dc.titleOn the possibility of level broadening in a quantum dot due to electrostatic interaction with a gate electrode
dc.typetext

Files

Collections

arXiv