Evidence of Klein tunneling in graphene p-n junctions

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dc.creatorStander, N.
dc.creatorHuard, B.
dc.creatorGoldhaber-Gordon, D.
dc.date2008-06-14
dc.date2008-11-30
dc.date.accessioned2026-07-07T12:30:46Z
dc.date.available2026-07-07T12:30:46Z
dc.descriptionTransport through potential barriers in graphene is investigated using a set of metallic gates capacitively coupled to graphene to modulate the potential landscape. When a gate-induced potential step is steep enough, disorder becomes less important and the resistance across the step is in quantitative agreement with predictions of Klein tunneling of Dirac fermions up to a small correction. We also perform magnetoresistance measurements at low magnetic fields and compare them to recent predictions.
dc.descriptionMajor changes made: 1) Taking into account properly the contribution of the resistance of monopolar junctions to the odd part of the resistance. To better present the results we use a fitting parameter for the amplitude of screening in graphene. 2) Wrong data for the diffusive model in figures 3, 9 and 10 was plotted in former version. 3) Figure 5 moved to EPAPS
dc.identifierhttps://arxiv.org/abs/0806.2319
dc.identifierhttp://arxiv.org/abs/0806.2319
dc.identifierPhys. Rev. Lett. 102, 026807 (2009)
dc.identifierdoi:10.1103/PhysRevLett.102.026807
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/216236
dc.subjectMesoscale and Nanoscale Physics
dc.titleEvidence of Klein tunneling in graphene p-n junctions
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