External Control of Magnetism in Semiconductors at High Temperature (~100K)

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dc.creatorNazmul, Ahsan M.
dc.creatorKobayashi, S.
dc.creatorSugahara, S.
dc.creatorTanaka, M.
dc.date2003-09-23
dc.date.accessioned2026-07-07T02:53:44Z
dc.date.available2026-07-07T02:53:44Z
dc.descriptionWe demonstrate the electrical and optical control of ferromagnetism in semiconductor heterostructures at high temperatures of 100-117 K. The heterostructures consist of Mn delta-doped GaAs and p-type AlGaAs, where the overlap of the hole wavefunction with the Mn delta-doping profile leads to high ferromagnetic transition temperature TC of over 100 K (max. 172 K). We are able to isothermally change the paramagnetic state to the ferromagnetic state and vice versa, by applying a gate electric-field or by light irradiation. The large modulation of TC (DTC ~15 K) at high temperatures (> ~100 K) demonstrated here may pave the way to functional device applications compatible with the present semiconductor technology.
dc.description15 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0309532
dc.identifierhttp://arxiv.org/abs/cond-mat/0309532
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/22275
dc.subjectMaterials Science
dc.titleExternal Control of Magnetism in Semiconductors at High Temperature (~100K)
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