Silicon detectors: damage, modelling and expected long-time behaviour in physics experiments at ultra high energy

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dc.creatorLazanu, Ionel
dc.creatorLazanu, Sorina
dc.date2006-11-15
dc.date.accessioned2026-07-07T11:03:33Z
dc.date.available2026-07-07T11:03:33Z
dc.descriptionIn this contribution, the structural modifications of the material and the degradation of devices is modelled and compared with experimental data for more resistivities, temperatures, crystal orientations and oxygen concentrations, considering the existence of the new primary fourfold coordinated defect, besides the vacancy and the interstitial. Some estimations of the behaviour of detectors in concrete environments at the next generations of high energy physics experiments as LHC, SLHC, VLHC, or ULHC are done.
dc.descriptionX-th Pisa Meeting on Advanced Detectors, May 21-27, 2006, La Biodola, Isola d'Elba (Italy), to be published in Nuclear Instruments and Methods in Physics Research A
dc.identifierhttps://arxiv.org/abs/physics/0611142
dc.identifierhttp://arxiv.org/abs/physics/0611142
dc.identifierNucl.Instrum.Meth.A572:297-299,2007
dc.identifierdoi:10.1016/j.nima.2006.10.280
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/188633
dc.subjectInstrumentation and Detectors
dc.subjectHigh Energy Physics - Phenomenology
dc.titleSilicon detectors: damage, modelling and expected long-time behaviour in physics experiments at ultra high energy
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