Admittance and Nonlinear Transport in Quantum Wires, Point Contacts, and Resonant Tunneling Barriers

Simple item page
dc.creatorButtiker, M.
dc.creatorChristen, T.
dc.date1996-10-03
dc.date.accessioned2026-07-07T09:11:11Z
dc.date.available2026-07-07T09:11:11Z
dc.descriptionWe present a discussion of the admittance (ac-conductance) and nonlinear I-V-characteristic for a number of mesoscopic conductors. Our approach is based on a generalization of the scattering approach which now includes the effects of the (long-range) Coulomb interaction. We discuss the admittance of a wire with an impurity and with a nearby gate. We extend a discussion of the low-frequency admittance of a quantum point contact to investigate the effects of the gates used to form the contact. We discuss the nonlinear I-V characteristic of a resonant double barrier structure and discuss the admittance for the double barrier for a large range of frequencies. Our approach emphasizes the overall conservation of charge (gauge invariance) and current conservation and the resulting sum rules for the admittance matrix and nonlinear transport coefficients.
dc.description31 pages, 11 Postscript figures. Paper to be published in "Mesoscopic Electron Transport", edited by L. Kowenhoven, G. Schoen and L. Sohn, NATO ASI Series E, Kluwer Ac. Publ., Dordrecht
dc.identifierhttps://arxiv.org/abs/cond-mat/9610025
dc.identifierhttp://arxiv.org/abs/cond-mat/9610025
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/151592
dc.subjectMesoscale and Nanoscale Physics
dc.titleAdmittance and Nonlinear Transport in Quantum Wires, Point Contacts, and Resonant Tunneling Barriers
dc.typetext

Files

Collections

arXiv