Quantum derivatives and high-frequency gain in semiconductor superlattices

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dc.creatorShorokhov, A. V.
dc.creatorAlekseev, K. N.
dc.date2006-02-23
dc.date.accessioned2026-07-07T07:01:54Z
dc.date.available2026-07-07T07:01:54Z
dc.descriptionWe derive simple difference formulas describing a small-signal absorption of THz field in a semiconductor superlattice driven by a microwave pump. We give a transparent geometric interpretation of these formulas that allows a search of optimum conditions for the gain employing only a simple qualitative analysis. Our theoretical approach provides a powerful tool for finding the correspondence between quasistatic and dynamic regimes in ac-driven semiconductor superlattices.
dc.descriptionSubmitted to proceedings of 4th Int. Symp. Nanostructures: Physics and Technology (St Petersburg, Russia, June 26-30, 2006). For detailed consideration see in cond-mat/0602209
dc.identifierhttps://arxiv.org/abs/cond-mat/0602546
dc.identifierhttp://arxiv.org/abs/cond-mat/0602546
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/108420
dc.subjectMesoscale and Nanoscale Physics
dc.titleQuantum derivatives and high-frequency gain in semiconductor superlattices
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