Electronic mechanism of ion expulsion under UV nanosecond laser excitation of silicon: Experiment and modeling

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dc.creatorMarine, Wladimir
dc.creatorBulgakova, Nadezhda M.
dc.creatorPatrone, Lionel
dc.creatorOzerov, Igor
dc.date2004-03-12
dc.date2004-03-14
dc.date.accessioned2026-07-07T02:56:56Z
dc.date.available2026-07-07T02:56:56Z
dc.descriptionWe present experimental and modeling studies of UV nanosecond pulsed laser desorption and ablation of (111) bulk silicon. The results involve a new approach to the analysis of plume formation dynamics under high-energy photon irradiation of the semiconductor surface. Non-thermal, photo-induced desorption has been observed at low laser fluence, well below the melting threshold. Under ablation conditions, the non-thermal ions have also a high concentration. The origin of these ions is discussed on the basis of electronic excitation of Si surface states associated with the Coulomb explosion mechanism. We present a model describing dynamics of silicon target excitation, heating and harge-carrier transport.
dc.identifierhttps://arxiv.org/abs/cond-mat/0403330
dc.identifierhttp://arxiv.org/abs/cond-mat/0403330
dc.identifierApplied Physics A 79 (2004) 771-774
dc.identifierdoi:10.1007/s00339-004-2783-y
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/23522
dc.subjectMaterials Science
dc.subjectChemical Physics
dc.titleElectronic mechanism of ion expulsion under UV nanosecond laser excitation of silicon: Experiment and modeling
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