Growth of Epitaxial MgB2 Thick Films with Columnar Structures by Using HPCVD

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dc.creatorSeong, Won Kyung
dc.creatorHuh, Ji Yeong
dc.creatorKang, Won Nam
dc.creatorKim, Jeong-Woon
dc.creatorKwon, Yong-Seung
dc.creatorYang, Nam-Keun
dc.creatorPark, Je-Geun
dc.date2007-09-12
dc.date.accessioned2026-07-07T08:29:10Z
dc.date.available2026-07-07T08:29:10Z
dc.descriptionEpitaxial MgB2 thick films were grown on Al2O3 substrates at 600 oC by using the hybrid physical chemical vapor deposition (HPCVD) technique. In order to obtain a high magnesium vapor pressure around the substrates, we used a special susceptor having a susceptor cap and achieved a very high growth rate of 0.17 um/min. Hexgonal-shaped columnar structures were observed by cross-sectional and planar view transmission electron microscope (TEM) images. For the 1.7-um-thick film, the Tc was observed to be 40.5 K with a Jc of 1.5 x 10^6 A/cm^2 at 30 K. The vortex pinning mechanism by intercolumnar boundaries will be discussed.
dc.description10 pages including 6 figures
dc.identifierhttps://arxiv.org/abs/0709.1884
dc.identifierhttp://arxiv.org/abs/0709.1884
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/137870
dc.subjectSuperconductivity
dc.titleGrowth of Epitaxial MgB2 Thick Films with Columnar Structures by Using HPCVD
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