Evaluation of the Bychkov- Rashba Field from the Spin Resonance of Electrons in a Si Quantum Well
| dc.creator | Wilamowski, Z. | |
| dc.creator | Jantsch, W. | |
| dc.date | 2001-10-17 | |
| dc.date.accessioned | 2026-07-07T02:43:11Z | |
| dc.date.available | 2026-07-07T02:43:11Z | |
| dc.description | From spin resonance of two-dimensional (2D) conduction electrons in a modulation doped SiGe/Si/SiGe quantum well structure we find a 2D anisotropy of both the line broadening (dephasing time) and the g-factor. We show that these can be explained consistently in terms of the Bychkov-Rashba (BR) field which here is the dominant coupling between electron motion and spin. We obtain a BR parameter of alpha = 1.1 e-12 eV cm - three orders of magnitude smaller as compared to III-V wells. Extrapolating for low electron concentrations we obtain a g-factor of the Si conduction band of 2.00073+/-0.00010. | |
| dc.description | PDF, 4 pages | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0110342 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0110342 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/18397 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Evaluation of the Bychkov- Rashba Field from the Spin Resonance of Electrons in a Si Quantum Well | |
| dc.type | text |