Origin of Superconductivity in Boron-doped Diamond
| dc.creator | Lee, K. -W. | |
| dc.creator | Pickett, W. E. | |
| dc.date | 2004-04-22 | |
| dc.date | 2004-10-14 | |
| dc.date.accessioned | 2026-07-07T02:57:46Z | |
| dc.date.available | 2026-07-07T02:57:46Z | |
| dc.description | Superconductivity of boron-doped diamond, reported recently at T_c=4 K, is investigated exploiting its electronic and vibrational analogies to MgB2. The deformation potential of the hole states arising from the C-C bond stretch mode is 60% larger than the corresponding quantity in MgB2 that drives its high Tc, leading to very large electron-phonon matrix elements. The calculated coupling strength λ~ 0.5 leads to T_c in the 5-10 K range and makes phonon coupling the likely mechanism. Higher doping should increase T_c somewhat, but effects of three dimensionality primarily on the density of states keep doped diamond from having a T_c closer to that of MgB2. | |
| dc.description | Four pages with two embedded figures, corrected fig1. (To appear in Physical Review Letters(2004)) | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0404547 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0404547 | |
| dc.identifier | Phys. Rev. Lett. 93, 237003 (2004) | |
| dc.identifier | doi:10.1103/PhysRevLett.93.237003 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/23802 | |
| dc.subject | Superconductivity | |
| dc.subject | Materials Science | |
| dc.title | Origin of Superconductivity in Boron-doped Diamond | |
| dc.type | text |