Suppression of hole-mediated ferromagnetism in GaMnP by hydrogen

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dc.creatorBihler, C.
dc.creatorKraus, M.
dc.creatorBrandt, M. S.
dc.creatorGoennenwein, S. T. B.
dc.creatorOpel, M.
dc.creatorScarpulla, M. A.
dc.creatorFarshchi, R.
dc.creatorDubon, O. D.
dc.date2007-07-18
dc.date.accessioned2026-07-07T09:49:13Z
dc.date.available2026-07-07T09:49:13Z
dc.descriptionWe report the successful passivation of the Mn acceptors in GaMnP upon exposure to a remote dc hydrogen plasma. The as-grown films are non-metallic and ferromagnetic with a Curie temperature of T_C=55K. After hydrogenation the sample resistivity increases by approximately three orders of magnitude at room temperature and six orders of magnitude at 25 K. Furthermore, the hydrogenated samples are paramagnetic, which is evidenced by a magnetization curve at 5 K that is best described by a Brillouin function with g=2 and J=5/2 expected for Mn atoms in the 3d^5 configuration. These observations unambiguously proof that the ferromagnetism is carrier-mediated also in GaMnP.
dc.identifierhttps://arxiv.org/abs/0707.2777
dc.identifierhttp://arxiv.org/abs/0707.2777
dc.identifierJ. Appl. Phys. 104, 013908 (2008)
dc.identifierdoi:10.1063/1.2952045
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/164501
dc.subjectMaterials Science
dc.titleSuppression of hole-mediated ferromagnetism in GaMnP by hydrogen
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