Hole transport in p-type GaAs quantum dots and point contacts

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dc.creatorGrbic, B.
dc.creatorLeturcq, R.
dc.creatorIhn, T.
dc.creatorEnsslin, K.
dc.creatorReuter, D.
dc.creatorWieck, A. D.
dc.date2007-11-04
dc.date.accessioned2026-07-07T08:40:34Z
dc.date.available2026-07-07T08:40:34Z
dc.descriptionStrong spin-orbit interaction characteristic for p-type GaAs systems, makes such systems promising for the realization of spintronic devices. Here we report on transport measurements in nanostructures fabricated on p-type, C-doped GaAs heterostructures by scanning probe oxidation lithography. We observe conductance quantization in a quantum point contact, as well as pronounced Coulomb resonances in two quantum dots with different geometries. Charging energies for both dots, extracted from Coulomb diamond measurements are in agreement with the lithographic dimensions of the dots. The absence of excited states in Coulomb diamond measurements indicates that the dots are in the multi-level transport regime.
dc.descriptionProceedings of ICPS-28, Vienna 2006; 2 pages, 2 figures
dc.identifierhttps://arxiv.org/abs/0711.0485
dc.identifierhttp://arxiv.org/abs/0711.0485
dc.identifierAIP Conf. Proc. 893, 777 (2007)
dc.identifierdoi:10.1063/1.2730121
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/141409
dc.subjectMesoscale and Nanoscale Physics
dc.titleHole transport in p-type GaAs quantum dots and point contacts
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