Spin gap in the 2D electron system of GaAs/AlGaAs single heterojunctions in weak magnetic fields

Simple item page
dc.creatorKhrapai, V. S.
dc.creatorShashkin, A. A.
dc.creatorShangina, E. L.
dc.creatorPellegrini, V.
dc.creatorBeltram, F.
dc.creatorBiasiol, G.
dc.creatorSorba, L.
dc.date2004-09-21
dc.date2005-07-13
dc.date.accessioned2026-07-07T03:00:56Z
dc.date.available2026-07-07T03:00:56Z
dc.descriptionWe study the interaction-enhanced spin gaps in the two-dimensional electron gas confined in GaAs/AlGaAs single heterojunctions subjected to weak magnetic fields. The values are obtained from the chemical potential jumps measured by magnetocapacitance. The gap increase with parallel magnetic field indicates that the lowest-lying charged excitations are accompanied with a single spin flip at the odd-integer filling factor nu=1 and nu=3, in disagreement with the concept of skyrmions.
dc.descriptionas published
dc.identifierhttps://arxiv.org/abs/cond-mat/0409549
dc.identifierhttp://arxiv.org/abs/cond-mat/0409549
dc.identifierPhys. Rev. B 72, 035344 (2005)
dc.identifierdoi:10.1103/PhysRevB.72.035344
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/24911
dc.subjectStrongly Correlated Electrons
dc.titleSpin gap in the 2D electron system of GaAs/AlGaAs single heterojunctions in weak magnetic fields
dc.typetext

Files

Collections

arXiv