On the Relationship between Resolution Enhancement and Multiphoton Absorption Rate in Quantum Lithography

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dc.creatorTsang, Mankei
dc.date2006-07-17
dc.date2007-02-28
dc.date.accessioned2026-07-07T07:57:26Z
dc.date.available2026-07-07T07:57:26Z
dc.descriptionThe proposal of quantum lithography [Boto et al., Phys. Rev. Lett. 85, 2733 (2000)] is studied via a rigorous formalism. It is shown that, contrary to Boto et al.'s heuristic claim, the multiphoton absorption rate of a ``NOON'' quantum state is actually lower than that of a classical state with otherwise identical parameters. The proof-of-concept experiment of quantum lithography [D'Angelo et al., Phys. Rev. Lett. 87, 013602 (2001)] is also analyzed in terms of the proposed formalism, and the experiment is shown to have a reduced multiphoton absorption rate in order to emulate quantum lithography accurately. Finally, quantum lithography by the use of a jointly Gaussian quantum state of light is investigated, in order to illustrate the trade-off between resolution enhancement and multiphoton absorption rate.
dc.description14 pages, 7 figures, submitted, v2: rewritten in response to referees' comments, v3: rewritten and extended, v4: accepted by Physical Review A
dc.identifierhttps://arxiv.org/abs/quant-ph/0607114
dc.identifierhttp://arxiv.org/abs/quant-ph/0607114
dc.identifierPhysical Review A 75, 043813 (2007)
dc.identifierdoi:10.1103/PhysRevA.75.043813
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/127650
dc.subjectQuantum Physics
dc.titleOn the Relationship between Resolution Enhancement and Multiphoton Absorption Rate in Quantum Lithography
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