Spin-orientation-dependent spatial structure of a magnetic acceptor state in a zincblende semiconductor

dc.creatorTang, Jian-Ming
dc.creatorFlatté, Michael E.
dc.date2005-07-01
dc.date2005-10-27
dc.date.accessioned2026-07-07T06:41:15Z
dc.date.available2026-07-07T06:41:15Z
dc.descriptionThe spin orientation of a magnetic dopant in a zincblende semiconductor strongly influences the spatial structure of an acceptor state bound to the dopant. The acceptor state has a roughly oblate shape with the short axis aligned with the dopant's core spin. For a Mn dopant in GaAs the local density of states at a site 8 angstrom away from the dopant can change by as much by 90% when the Mn spin orientation changes. These changes in the local density of states could be probed by scanning tunneling microscopy to infer the magnetic dopant's spin orientation.
dc.description5 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0507012
dc.identifierhttp://arxiv.org/abs/cond-mat/0507012
dc.identifierPhys. Rev. B 72, 161315(R) (2005)
dc.identifierdoi:10.1103/PhysRevB.72.161315
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/101606
dc.subjectMaterials Science
dc.titleSpin-orientation-dependent spatial structure of a magnetic acceptor state in a zincblende semiconductor
dc.typetext

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