Metallic and Insulating behaviour in p-SiGe at nu = 3/2

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dc.creatorColeridge, P. T.
dc.creatorWilliams, R. L.
dc.creatorLapointe, J.
dc.creatorZawadzki, P.
dc.date2002-08-16
dc.date.accessioned2026-07-07T02:46:52Z
dc.date.available2026-07-07T02:46:52Z
dc.descriptionShubnikov-de Haas data is presented for a p-SiGe sample exhibiting strongly insulating behaviour at nu = 3/2. In addition to the fixed points defining a high field metal- insulator transition into this phase separate fixed points can also be identified for the nu = 3 --> 2 and 2 --> 1 Integer quantum Hall transitions. Another feature of the data, that the Hall resistivity approaches zero in the insulating phase, indicates it is not a re-entrant Hall insulator. The behaviour is explained in terms of the strong exchange interactions. At integer filling factors these cause the 0 uparrow and 1 downarrow Landau levels to cross and be well separated but at non-integer values of nu screening reduces exchange effects and causes the levels to stick together. It is suggested the insulating behaviour, and high field metal/insulator transition, is a consequence of the strong exchange interactions.
dc.descriptionPresented at SEMIMAG15 - 15th International Conference on High Magnetic fields in Semiconductor Physics Oxford August 2002
dc.identifierhttps://arxiv.org/abs/cond-mat/0208330
dc.identifierhttp://arxiv.org/abs/cond-mat/0208330
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/19796
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleMetallic and Insulating behaviour in p-SiGe at nu = 3/2
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