Optical properties of graphene antidot lattices

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dc.creatorPedersen, Thomas G.
dc.creatorFlindt, Christian
dc.creatorPedersen, Jesper
dc.creatorJauho, Antti-Pekka
dc.creatorMortensen, Niels Asger
dc.creatorPedersen, Kjeld
dc.date2008-06-02
dc.date.accessioned2026-07-07T09:45:48Z
dc.date.available2026-07-07T09:45:48Z
dc.descriptionUndoped graphene is semi-metallic and thus not suitable for many electronic and optoelectronic applications requiring gapped semiconductor materials. However, a periodic array of holes (antidot lattice) renders graphene semiconducting with a controllable band gap. Using atomistic modelling, we demonstrate that this artificial nanomaterial is a dipole-allowed direct gap semiconductor with a very pronounced optical absorption edge. Hence, optical infrared spectroscopy should be an ideal probe of the electronic structure. To address realistic experimental situations, we include effects due to disorder and the presence of a substrate in the analysis.
dc.description11 pages, 9 figures, accepted for publication in Phys. Rev. B
dc.identifierhttps://arxiv.org/abs/0806.0277
dc.identifierhttp://arxiv.org/abs/0806.0277
dc.identifierPhys. Rev. B 77, 245431 (2008)
dc.identifierdoi:10.1103/PhysRevB.77.245431
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/163317
dc.subjectMesoscale and Nanoscale Physics
dc.titleOptical properties of graphene antidot lattices
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