Negative Magnetoresistance in the Nearest-neighbor Hopping Conduction

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dc.creatorWang, X. R.
dc.creatorXie, X. C.
dc.date1997-03-06
dc.date.accessioned2026-07-07T03:09:00Z
dc.date.available2026-07-07T03:09:00Z
dc.descriptionWe propose a size effect which leads to the negative magnetoresistance in granular metal-insulator materials in which the hopping between two nearest neighbor clusters is the main transport mechanism. We show that the hopping probability increases with magnetic field. This is originated from the level crossing in a few-electron cluster. Thus, the overlap of electronic states of two neighboring clusters increases, and the negative magnetoresistance is resulted.
dc.descriptionLatex file, no figure
dc.identifierhttps://arxiv.org/abs/cond-mat/9703057
dc.identifierhttp://arxiv.org/abs/cond-mat/9703057
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/27721
dc.subjectCondensed Matter
dc.titleNegative Magnetoresistance in the Nearest-neighbor Hopping Conduction
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