Graphene Spin Transistor

dc.creatorCho, Sungjae
dc.creatorChen, Yung-Fu
dc.creatorFuhrer, Michael S.
dc.date2007-06-12
dc.date.accessioned2026-07-07T08:47:04Z
dc.date.available2026-07-07T08:47:04Z
dc.descriptionGraphitic nanostructures, e.g. carbon nanotubes (CNT) and graphene, have been proposed as ideal materials for spin conduction[1-7]; they have long electronic mean free paths[8] and small spin-orbit coupling[9], hence are expected to have very long spin-scattering times. In addition, spin injection and detection in graphene opens new opportunities to study exotic electronic states such as the quantum Hall[10,11] and quantum spin Hall[9] states, and spin-polarized edge states[12] in graphene ribbons. Here we perform the first non-local four-probe experiments[13] on graphene contacted by ferromagnetic Permalloy electrodes. We observe sharp switching and often sign-reversal of the non-local resistance at the coercive field of the electrodes, indicating definitively the presence of a spin current between injector and detector. The non-local resistance changes magnitude and sign quasi-periodically with back-gate voltage, and Fabry-Perot-like oscillations[6,14,15] are observed, consistent with quantum-coherent transport. The non-local resistance signal can be observed up to at least T = 300 K.
dc.identifierhttps://arxiv.org/abs/0706.1597
dc.identifierhttp://arxiv.org/abs/0706.1597
dc.identifierApplied Physics Letters 91, 123105 (2007)
dc.identifierdoi:10.1063/1.2784934
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/143467
dc.subjectMesoscale and Nanoscale Physics
dc.titleGraphene Spin Transistor
dc.typetext

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