On the current gap of single-electron transistors
| dc.creator | Pogosov, Valentin V. | |
| dc.creator | Vasyutin, Eugene V. | |
| dc.date | 2005-12-24 | |
| dc.date.accessioned | 2026-07-07T06:53:40Z | |
| dc.date.available | 2026-07-07T06:53:40Z | |
| dc.description | Effects of the single-electron tunneling and the Coulomb blockade in a cluster structure (the molecular transistor) are investigated theoretically. In the framework of the particle-in-a-box model for the spherical and disk-shaped gold clusters, the electron spectrum, the temperature dependence of the chemical potential and the residual charge are calculated. We show that the residual charge is equal to the non-integer value of elementary charge $e$ and depends on the cluster's shape. The equations for the analysis of the current-voltage characteristic are used under conservation condition for the total energy of the structure taking into account the contact potential difference. Restrictions associated with the Coulomb instability of a cluster are introduced into the theory in a the simple way. It is shown that the critical charge of the cluster in the open electron system is close to the residual charge. For single-electron transistors based on small gold clusters the current gap and its voltage asymmetry are computed. We demonstrate that the current gap exhibits non-monotonic size dependences, which are related to the quantization of the electron spectrum and the Coulomb blockade. | |
| dc.description | 10 pages, 7 figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0512633 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0512633 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/105670 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | On the current gap of single-electron transistors | |
| dc.type | text |