Ab initio study of Curie temperatures of diluted III-V magnetic semiconductors

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dc.creatorKudrnovsky, J.
dc.creatorTurek, I.
dc.creatorDrchal, V.
dc.creatorMasek, J.
dc.creatorMaca, F.
dc.creatorWeinberger, P.
dc.date2003-02-21
dc.date.accessioned2026-07-07T02:49:45Z
dc.date.available2026-07-07T02:49:45Z
dc.descriptionThe electronic structure of diluted (Ga,Mn)As magnetic semiconductors in the presence of As-antisites and magnetic disorder is studied within the framework of the local spin density approximation. Both the chemical and magnetic disorders are treated using the coherent potential approximation. A ground state with partial disorder in the local moments and with a reduced total magnetic moment appears in the presence of As-antisites. We first estimate the Curie temperature T_c from total energy differences between the ferromagnetic and the paramagnetic state by identifying these with the corresponding energy difference in a classical Heisenberg model. A more systematic approach within the framework of the mean-field approximation to estimate T_c consists in an evaluation of the effective exchange fields acting on the magnetic moment at a given site. The presence of As-antisites strongly reduces the Curie temperature. The results indicate that the effect of impurities on the electronic structure cannot be neglected and influences the Curie temperature non-negligibly. A comparison of the calculated Curie temperatures to existing experimental data indicates an increase of the donor concentration with the increase of the Mn-content.
dc.description6 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0302441
dc.identifierhttp://arxiv.org/abs/cond-mat/0302441
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/20922
dc.subjectMaterials Science
dc.titleAb initio study of Curie temperatures of diluted III-V magnetic semiconductors
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