Ga-induced atom wire formation and passivation of stepped Si(112)

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dc.creatorSnijders, P. C.
dc.creatorGonzalez, C.
dc.creatorRogge, S.
dc.creatorPerez, R.
dc.creatorOrtega, J.
dc.creatorFlores, F.
dc.creatorWeitering, H. H.
dc.date2005-05-13
dc.date2005-08-02
dc.date.accessioned2026-07-07T06:19:33Z
dc.date.available2026-07-07T06:19:33Z
dc.descriptionWe present an in-depth analysis of the atomic and electronic structure of the quasi one-dimensional (1D) surface reconstruction of Ga on Si(112) based on Scanning Tunneling Microscopy and Spectroscopy (STM and STS), Rutherford Backscattering Spectrometry (RBS) and Density Functional Theory (DFT) calculations. A new structural model of the Si(112)6 x 1-Ga surface is inferred. It consists of Ga zig-zag chains that are intersected by quasi-periodic vacancy lines or misfit dislocations. The experimentally observed meandering of the vacancy lines is caused by the co-existence of competing 6 x 1 and 5 x 1 unit cells and by the orientational disorder of symmetry breaking Si-Ga dimers inside the vacancy lines. The Ga atoms are fully coordinated, and the surface is chemically passivated. STS data reveal a semiconducting surface and show excellent agreement with calculated Local Density of States (LDOS) and STS curves. The energy gain obtained by fully passivating the surface calls the idea of step-edge decoration as a viable growth method toward 1D metallic structures into question.
dc.descriptionSubmitted, 13 pages, accepted in Phys. Rev. B, notational change in Fig.8
dc.identifierhttps://arxiv.org/abs/cond-mat/0505343
dc.identifierhttp://arxiv.org/abs/cond-mat/0505343
dc.identifierPRB 72 (2005) 125343
dc.identifierdoi:10.1103/PhysRevB.72.125343
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/95073
dc.subjectOther Condensed Matter
dc.subjectMaterials Science
dc.titleGa-induced atom wire formation and passivation of stepped Si(112)
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