Activation mechanisms in sodium-doped Silicon MOSFETs

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dc.creatorFerrus, T.
dc.creatorGeorge, R.
dc.creatorBarnes, C. H. W.
dc.creatorLumpkin, N.
dc.creatorPaul, D. J.
dc.creatorPepper, M.
dc.date2005-12-02
dc.date2007-05-16
dc.date.accessioned2026-07-07T08:05:28Z
dc.date.available2026-07-07T08:05:28Z
dc.descriptionWe have studied the temperature dependence of the conductivity of a silicon MOSFET containing sodium ions in the oxide above 20 K. We find the impurity band resulting from the presence of charges at the silicon-oxide interface is split into a lower and an upper band. We have observed activation of electrons from the upper band to the conduction band edge as well as from the lower to the upper band. A possible explanation implying the presence of Hubbard bands is given.
dc.descriptionpublished in J. Phys. : Condens. Matter
dc.identifierhttps://arxiv.org/abs/cond-mat/0512039
dc.identifierhttp://arxiv.org/abs/cond-mat/0512039
dc.identifierJ. Phys.: Condens. Matter 19, 226216 (2007)
dc.identifierdoi:10.1088/0953-8984/19/22/226216
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/130292
dc.subjectStrongly Correlated Electrons
dc.titleActivation mechanisms in sodium-doped Silicon MOSFETs
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