Depth profile photoemission study of thermally diffused Mn/GaAs (001) interfaces

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dc.creatorOsafune, Y.
dc.creatorSong, G. S.
dc.creatorHwang, J. I.
dc.creatorIshida, Y.
dc.creatorKobayashi, M.
dc.creatorEbata, K.
dc.creatorOoki, Y.
dc.creatorFujimori, A.
dc.creatorOkabayashi, J.
dc.creatorKanai, K.
dc.creatorKubo, K.
dc.creatorOshima, M.
dc.date2007-11-21
dc.date2008-06-08
dc.date.accessioned2026-07-07T09:42:56Z
dc.date.available2026-07-07T09:42:56Z
dc.descriptionWe have performed a depth profile study of thermally diffused Mn/GaAs (001) interfaces using photoemission spectroscopy combined with Ar$^+$-ion sputtering. We found that Mn ion was thermally diffused into the deep region of the GaAs substrate and completely reacted with GaAs. In the deep region, the Mn 2$p$ core-level and Mn 3$d$ valence-band spectra of the Mn/GaAs (001) sample heated to 600 $^{\circ}$C were similar to those of Ga$_{1-x}$Mn$_x$As, zinc-blende-type MnAs dots, and/or interstitial Mn in tetrahedrally coordinated by As atoms, suggesting that the Mn 3$d$ states were essentially localized but were hybridized with the electronic states of the host GaAs. Ferromagnetism was observed in the dilute Mn phase.
dc.description5 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0711.3257
dc.identifierhttp://arxiv.org/abs/0711.3257
dc.identifierJ. Appl. Phys. 103, 103717 (2008)
dc.identifierdoi:10.1063/1.2931040
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/162369
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleDepth profile photoemission study of thermally diffused Mn/GaAs (001) interfaces
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