Ferromagnetism in cobalt doped n-GaN

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dc.creatorDhara, S.
dc.creatorSundaravel, B.
dc.creatorNair, K. G. M.
dc.creatorKesavamoorthy, R.
dc.creatorValsakumar, M. C.
dc.creatorRao, T. V. Chandrasekhar
dc.creatorChen, L. C.
dc.creatorChen, K. H.
dc.date2007-08-16
dc.date.accessioned2026-07-07T08:23:55Z
dc.date.available2026-07-07T08:23:55Z
dc.descriptionFerromagnetic ordering is reported in the post-annealed samples of Co doped n-GaN formed by Co+ implantation. A maximum Curie temperature ~ 250K is recorded for the sample with 8 atomic percent Co. Particle induced x-ray emission-channeling study confirmed the substitutional Co in Ga lattice site. Local atomic arrangement around magnetic impurities is also analyzed using Raman study. A disordered model with carrier mediated coupling of localized magnetic moments is made responsible for the observed ferromagnetic ordering.
dc.description11 pages, 3 figures, Journal
dc.identifierhttps://arxiv.org/abs/0708.2217
dc.identifierhttp://arxiv.org/abs/0708.2217
dc.identifierApplied Physics Letters 88 (17) 173110 (2006)
dc.identifierdoi:10.1063/1.2194347
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/136170
dc.subjectMaterials Science
dc.titleFerromagnetism in cobalt doped n-GaN
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