Broadband Ferromagnetic Resonance Linewidth Measurement of Magnetic Tunnel Junction Multilayers

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dc.creatorSierra, J. F.
dc.creatorAliev, F. G.
dc.creatorHeindl, R.
dc.creatorRussek, S. E.
dc.creatorRippard, W. H.
dc.date2009-01-27
dc.date.accessioned2026-07-07T12:34:50Z
dc.date.available2026-07-07T12:34:50Z
dc.descriptionThe broadband ferromagnetic resonance (FMR) linewidth of the free layer of magnetic tunnel junctions is used as a simple diagnostic of the quality of the magnetic structure. The FMR linewidth increases near the field regions of free layer reversal and pinned layer reversal, and this increase correlates with an increase in magnetic hysteresis in unpatterned films, low frequency noise in patterned devices, and previous observations of magnetic domain ripple by use of Lorentz microscopy. Postannealing changes the free layer FMR linewidth indicating that considerable magnetic disorder, originating in the exchange-biased pinned layer, is transferred to the free layer.
dc.description13 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0901.4196
dc.identifierhttp://arxiv.org/abs/0901.4196
dc.identifierApplied Phyics Letters 94, 012506 (2009)
dc.identifierdoi:10.1063/1.3054642
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/217577
dc.subjectMaterials Science
dc.titleBroadband Ferromagnetic Resonance Linewidth Measurement of Magnetic Tunnel Junction Multilayers
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