Metal-Semiconductor Transition in Armchair Carbon Nanotubes by Symmetry Breaking
| dc.creator | Li, Yan | |
| dc.creator | Rotkin, Slava V. | |
| dc.creator | Ravaioli, Umberto | |
| dc.date | 2004-09-17 | |
| dc.date | 2005-11-16 | |
| dc.date.accessioned | 2026-07-07T06:37:16Z | |
| dc.date.available | 2026-07-07T06:37:16Z | |
| dc.description | The electronic band structure of armchair carbon nanotubes may be considerably modified by potentials with angular dependence. Different angular modes V_q ~ cos(q*theta) have been studied within a tight-binding scheme. Using symmetry arguments, we demonstrate a bandgap opening in these metallic nanotubes when certain selection rules are satisfied for both potential and nanotube structure. We estimate the bandgap opening as a function of both the external potential strength and the nanotube radius and suggest an effective mechanism of metal-semiconductor transition by combination of different forms of perturbations. | |
| dc.description | 3 pages, 3 figures, published on APL | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0409464 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0409464 | |
| dc.identifier | Appl. Phys. Lett., 85, 4178 (2004) | |
| dc.identifier | doi:10.1063/1.1811792 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/100336 | |
| dc.subject | Materials Science | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Metal-Semiconductor Transition in Armchair Carbon Nanotubes by Symmetry Breaking | |
| dc.type | text |