As-rich GaAs(001) surfaces observed during As4-irradition by scanning tunneling microscopy

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dc.creatorTsukamoto, Shiro
dc.creatorPristovsek, Markus
dc.creatorOrr, Bradford G.
dc.creatorOhtake, Akihiro
dc.creatorBell, Gavin R.
dc.creatorKoguchi, Nobuyuki
dc.date2002-02-05
dc.date.accessioned2026-07-07T05:47:03Z
dc.date.available2026-07-07T05:47:03Z
dc.descriptionAs-rich GaAs (001) surfaces are successfully observed during As4-irradition by a system in which scanning tunneling microscopy (STM) and molecular beam epitaxy can be performed simultaneously. With a substrate temperature of 440 C and an As4 partial pressure of 2x10-6 torr, reflection high energy electron diffraction patterns and reflectance anisotropy spectra confirm a c(4x4) As-stabilized surface. STM images clearly show alteration of the surface reconstructions while scanning. It is postulated that continual attachment / detachment of As molecules to and from the surface produces the observed dynamic behavior.
dc.description11 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/physics/0202013
dc.identifierhttp://arxiv.org/abs/physics/0202013
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/84563
dc.subjectChemical Physics
dc.subjectAtomic and Molecular Clusters
dc.titleAs-rich GaAs(001) surfaces observed during As4-irradition by scanning tunneling microscopy
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