Strong spin-orbit interactions and weak antilocalization in carbon doped p-type GaAs heterostructures

Simple item page
dc.creatorGrbic, Boris
dc.creatorLeturcq, Renaud
dc.creatorIhn, Thomas
dc.creatorEnsslin, Klaus
dc.creatorReuter, Dirk
dc.creatorWieck, Andreas D.
dc.date2007-11-05
dc.date.accessioned2026-07-07T09:28:57Z
dc.date.available2026-07-07T09:28:57Z
dc.descriptionWe present a comprehensive study of the low-field magnetoresistance in carbon doped p-type GaAs/AlGaAs heterostructures aiming at the investigation of spin-orbit interaction effects. The following signatures of exceptionally strong spin-orbit interactions are simultaneously observed: a beating in the Shubnikov-de Haas oscillations, a classical positive magnetoresistance due to the presence of the two spin-split subbands, and a weak anti-localization dip in the magnetoresistance. The spin-orbit induced splitting of the heavy hole subband at the Fermi level is determined to be around 30% of the total Fermi energy. The phase coherence length of holes of around 2.5 $μ$m at a temperature of 70 mK, extracted from weak anti-localization measurements, is promissing for the fabrication of phase-coherent p-type nanodevices.
dc.description8 pages, 6 figures;
dc.identifierhttps://arxiv.org/abs/0711.0492
dc.identifierhttp://arxiv.org/abs/0711.0492
dc.identifierPhys. Rev. B 77, 125312 (2008)
dc.identifierdoi:10.1103/PhysRevB.77.125312
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/157609
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleStrong spin-orbit interactions and weak antilocalization in carbon doped p-type GaAs heterostructures
dc.typetext

Files

Collections

arXiv