Silicon-based photonic crystal nanocavity light emitters

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dc.creatorMakarova, Maria
dc.creatorVuckovic, Jelena
dc.creatorSanda, Hiroyuki
dc.creatorNishi, Yoshio
dc.date2006-09-07
dc.date.accessioned2026-07-07T07:26:03Z
dc.date.available2026-07-07T07:26:03Z
dc.descriptionWe have demonstrated an up to seven-fold enhancement of photoluminescence from silicon-rich silicon nitride film due to a single photonic crystal cavity. The enhancement is partially attributed to the Purcell effect. Purcell factor predicted by FDTD calculations is 32 for a linear three-defect cavity mode with computed quality factor of 332 and mode volume of 0.785 cubic wavelengths. Experimentally measured cavity quality (Q) factors vary in the range of 200 to 300, showing excellent agreement with calculations. The emission peak can be tuned to any wavelength in the 600 to 800 nm range.
dc.description5 pages, 2 figures
dc.identifierhttps://arxiv.org/abs/physics/0609060
dc.identifierhttp://arxiv.org/abs/physics/0609060
dc.identifierApplied Physics Letters 89, 221101 (2006)
dc.identifierdoi:10.1063/1.2396903
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/116938
dc.subjectOptics
dc.titleSilicon-based photonic crystal nanocavity light emitters
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